GaN Radio Frequency Transistors and Semi-Conductors Devices

Establish local manufacturing capabilities for Gallium Nitride (GaN)-based high-performance components and other semiconductor devices used in communication and radar systems, as well as energy-efficient applications such as electric vehicles, smart grids, and industrial equipment. 

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Expected Investment size of USD 350 Mn USD
Expected IRR: ~12% 
Payback period: 10  years
Job Creation: 400
GDP Impact: USD 500 Mn
Location (Region): Saudi Arabia

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